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Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-480 To Order Previous Datasheet Index Next Data Sheet Bulletin I25175/B ST223S SERIES INVERTER GRADE THYRISTORS Stud Version Features All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance 220A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ ST223S 220 85 345 5850 6120 171 156 400 to 800 10 to 20 - 40 to 125 Units A C A A A KA2s KA2s V s C case style TO-209AB (TO-93) D-481 To Order Previous Datasheet Index Next Data Sheet ST223S Series ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code V DRM /V RRM , maximum repetitive peak voltage V ST223S 04 08 400 800 VRSM , maximum non-repetitive peak voltage V 500 900 I DRM /I RRM max. @ TJ = TJ max. mA 40 Current Carrying Capability Frequency 180 el 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 630 630 580 420 50 V DRM 50 60 o ITM 180 el 430 420 370 250 50 50 85 970 1010 1000 860 50 V DRM 60 o ITM 100s 690 710 680 630 50 85 6450 3140 1860 980 50 V DRM 60 ITM Units 4850 2280 1310 790 50 85 V A/s C A 47 / 0.22F 47 / 0.22F 47 / 0.22F On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current ST223S 220 85 345 5850 6120 4920 5150 Units A C Conditions 180 conduction, half sine wave DC @ 76C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max I2 t Maximum I2t for fusing 171 156 121 111 I 2 t Maximum I2t for fusing 1710 t = 0.1 to 10ms, no voltage reapplied D-482 To Order Previous Datasheet Index Next Data Sheet ST223S Series Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics D-486 To Order Previous Datasheet Index Next Data Sheet ST223S Series Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics D-487 To Order Previous Datasheet Index Next Data Sheet ST223S Series Fig. 11 - Frequency Characteristics Fig. 12 - Frequency Characteristics Fig. 13 - Frequency Characteristics D-488 To Order Previous Datasheet Index Next Data Sheet ST223S Series Fig. 14 - Maximum On-state Energy Power Loss Characteristics Fig. 15 - Gate Characteristics D-489 To Order Previous Datasheet Index Next Data Sheet ST223S Series On-state Conduction Parameter V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r r t1 ST223S 1.58 1.05 1.09 0.88 Units Conditions ITM= 600A, TJ = TJ max, t = 10ms sine wave pulse p V T(TO)1 Low level value of threshold V (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current m 0.82 600 1000 mA t2 IH IL T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d ST223S 1000 0.78 Min 10 Max 20 Units A/s Conditions TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ = 25C, VDM = rated VDRM, ITM = 50A DC, t = 1s p Typical delay time s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, t = 500s, dv/dt: see table in device code p t q Max. turn-off time Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST223S 500 40 Units V/s mA Conditions TJ = TJ max., linear to 80% VDRM, higher value available on request TJ = TJ max., rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST223S 60 10 10 20 Units W A Conditions TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t 5ms p PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger V 5 200 3 20 0.25 mA TJ = TJ max, t 5ms p TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied D-483 To Order Previous Datasheet Index Next Data Sheet ST223S Series Thermal and Mechanical Specifications Parameter TJ T stg ST223S -40 to 125 -40 to 150 0.105 0.04 31 (275) 24.5 (210) Units C Conditions Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10% RthJC RthCS T DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Mounting surface, smooth, flat and greased Lubricated threads wt Approximate weight Case style 280 TO-209AB (TO-93) RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction 0.016 0.019 0.025 0.036 0.060 Rectangular conduction Units 0.012 0.020 0.027 0.037 0.060 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 1 22 2 3 3 S 4 08 5 P 6 F 7 N 8 0 9 10 1 2 3 4 5 6 7 8 9 - Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals) t (s) q dv/dt - tq combinations available dv/dt (V/s) 10 12 15 18 20 25 30 20 CN CM CL CP CK --50 DN DM DL DP DK --100 EN EM EL EP EK --200 FN * FM FL * FP FK --400 --HL HP HK HJ HH 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) *Standard part number. All other types available only on request. D-484 To Order Previous Datasheet Index Next Data Sheet ST223S Series Outline Table CERAMIC HOUSING 16.5 (0.65) MAX. )M IN (0. 9 .5 37 8.5 (0.33) DIA. 4.3 (0.17) DIA 2.6 (0.10) MAX. C.S. 16mm 2 RED SILICON RUBBER 15 7 (6 .1 8) 1 70 (6.69 ) RED CATHODE WHITE GATE C.S. 0.4 mm (.0006 s.i.) 2 (.025 s.i.) 20 (0 . FLEXIBLE LEAD 79 )M IN . . Fast-on Terminals AMP. 280000-1 REF-250 215 (8.46) 70 (2 .7 5) M IN . RED SHRINK 29 (1 .1 4) M A X. WHITE SHRINK 10 (0.39) 22.5 (0.88) MAX. DIA. 1 2.5 (0 .4 9) M A X . 2 1 (0 .8 3) M A X. SW 27 1/2"-20UNF-2A 29.5 (1.16) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) CERAMIC HOUSING FLAG TERMINALS 22 (0.89) 14 (0.55) DIA. 6.5 (0.25) 13 ( 0 .5 1 ) 8 0 ( 3 .15 ) M A X . 1.5 (0.06) DIA. 3 8 .5 (1 .52 ) M A X . DIA. 27.5 (1.08) MAX. 27 .5 (1 .0 8 ) M A X . 1 6 (0 .6 3 ) M A X . Case Style TO-209AB (TO-93) Flag All dimensions in millimeters (inches) SW 32 3/4"-16UNF-2A* *FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX. 3 (0.12) D-485 To Order |
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